Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K

IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-07-18 DOI:10.1109/JSTQE.2024.3430060
Sudip Acharya;Hryhorii Stanchu;Rajesh Kumar;Solomon Ojo;Murtadha Alher;Mourad Benamara;Guo-En Chang;Baohua Li;Wei Du;Shui-Qing Yu
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Abstract

Owing to its true direct bandgap and tunable bandgap energies, GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser operating at room temperature under pulsed excitation and at cryogenic temperature under continuous-wave excitation show great promise of GeSn lasers to be efficient electrically injected light sources on Si. Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20 μm, 40 μm, and 80 μm ridge widths. A lasing threshold of 0.756 kA/cm 2 at 77 K, emitting wavelength of 2722 nm, and maximum operating temperature of 140 K were obtained. The lower threshold current density compared to previous works was achieved by reducing optical loss and improving the optical confinement. The peak power was measured as 2.2 mW/facet at 77 K.
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工作温度为 140 K 的硅基电注入式中红外 GeSn 激光器
由于具有真正的直接带隙和可调谐带隙能量,GeSn 合金作为可在硅上单片集成的中红外激光器的增益介质越来越具有吸引力。在室温脉冲激励和低温连续波激励下运行的光泵浦 GeSn 激光器的演示表明,GeSn 激光器很有希望成为硅上的高效电注入光源。在此,我们报告了使用法布里-珀罗腔的电注入 GeSn 激光器,其脊宽分别为 20 μm、40 μm 和 80 μm。在 77 K 的温度下,发光阈值为 0.756 kA/cm2,发射波长为 2722 nm,最高工作温度为 140 K。与之前的研究相比,阈值电流密度更低是通过减少光学损耗和改善光学约束实现的。在 77 K 时测得的峰值功率为 2.2 mW/facet。
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来源期刊
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
10.60
自引率
2.00%
发文量
212
审稿时长
3 months
期刊介绍: Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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