{"title":"Investigating the potential of germanene in solar cells: a simulation study on a-SiGe/c-Si structure","authors":"Arash Madmeli, Kiarash Madmeli, Jabbar Ganji","doi":"10.1007/s10825-024-02199-w","DOIUrl":null,"url":null,"abstract":"<div><p>Utilizing the two-dimensional (2D) nano-bands with graphene-like atom arrangement in the structure of the solar cells is of significant importance for the next generation of solar cells. In the present research, germanene (2D structure consisting of germanium atoms) was placed in ITO/germanene (1, 2, 3)/<span>\\({\\hbox {MoS}}_{2}\\)</span> (n)/a-SiGe: H (i)/c-Si (P)/Au heterojunction solar cell structures once as semiconductor layers with Al (germanene1), P (germanene2), and In (germanene3) dopant, separately. Then, the free-standing germanene was used as front contact in a structure consisting of germanene/<span>\\({\\hbox {MoS}}_{2}\\)</span> (n)/a-SiGe: H (i)/c-Si (P)/Au of the heterojunction cell. The impacts of different radiant intensities at 300 K temperature by the AM1.5 spectrum radiation were investigated using the AFORS-HET simulation tool. The highest efficiency was obtained in the presence of the germanene2 layer, which was 18.64%, 17.78%, and 19.56%, respectively, in 1 sun, 0.1 sun, and 100 sun radiant intensities. By applying the free-standing germanene in the structure of the proposed cell, the efficiency in radiant intensities of 1 sun, 0.1 sun, and 50 sun were 26.98%, 25.87%, and 27.99%, respectively. The results suggest that this 2D structure can improve the cell’s output parameters, especially the efficiency, positively affecting the solar cell function due to its monoatomic thickness. Therefore, germanene can be an emerging competitor to other 2D structures used in the structure of solar cells.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"991 - 999"},"PeriodicalIF":2.2000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02199-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Utilizing the two-dimensional (2D) nano-bands with graphene-like atom arrangement in the structure of the solar cells is of significant importance for the next generation of solar cells. In the present research, germanene (2D structure consisting of germanium atoms) was placed in ITO/germanene (1, 2, 3)/\({\hbox {MoS}}_{2}\) (n)/a-SiGe: H (i)/c-Si (P)/Au heterojunction solar cell structures once as semiconductor layers with Al (germanene1), P (germanene2), and In (germanene3) dopant, separately. Then, the free-standing germanene was used as front contact in a structure consisting of germanene/\({\hbox {MoS}}_{2}\) (n)/a-SiGe: H (i)/c-Si (P)/Au of the heterojunction cell. The impacts of different radiant intensities at 300 K temperature by the AM1.5 spectrum radiation were investigated using the AFORS-HET simulation tool. The highest efficiency was obtained in the presence of the germanene2 layer, which was 18.64%, 17.78%, and 19.56%, respectively, in 1 sun, 0.1 sun, and 100 sun radiant intensities. By applying the free-standing germanene in the structure of the proposed cell, the efficiency in radiant intensities of 1 sun, 0.1 sun, and 50 sun were 26.98%, 25.87%, and 27.99%, respectively. The results suggest that this 2D structure can improve the cell’s output parameters, especially the efficiency, positively affecting the solar cell function due to its monoatomic thickness. Therefore, germanene can be an emerging competitor to other 2D structures used in the structure of solar cells.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.