Investigating the potential of germanene in solar cells: a simulation study on a-SiGe/c-Si structure

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-07-26 DOI:10.1007/s10825-024-02199-w
Arash Madmeli, Kiarash Madmeli, Jabbar Ganji
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Abstract

Utilizing the two-dimensional (2D) nano-bands with graphene-like atom arrangement in the structure of the solar cells is of significant importance for the next generation of solar cells. In the present research, germanene (2D structure consisting of germanium atoms) was placed in ITO/germanene (1, 2, 3)/\({\hbox {MoS}}_{2}\) (n)/a-SiGe: H (i)/c-Si (P)/Au heterojunction solar cell structures once as semiconductor layers with Al (germanene1), P (germanene2), and In (germanene3) dopant, separately. Then, the free-standing germanene was used as front contact in a structure consisting of germanene/\({\hbox {MoS}}_{2}\) (n)/a-SiGe: H (i)/c-Si (P)/Au of the heterojunction cell. The impacts of different radiant intensities at 300 K temperature by the AM1.5 spectrum radiation were investigated using the AFORS-HET simulation tool. The highest efficiency was obtained in the presence of the germanene2 layer, which was 18.64%, 17.78%, and 19.56%, respectively, in 1 sun, 0.1 sun, and 100 sun radiant intensities. By applying the free-standing germanene in the structure of the proposed cell, the efficiency in radiant intensities of 1 sun, 0.1 sun, and 50 sun were 26.98%, 25.87%, and 27.99%, respectively. The results suggest that this 2D structure can improve the cell’s output parameters, especially the efficiency, positively affecting the solar cell function due to its monoatomic thickness. Therefore, germanene can be an emerging competitor to other 2D structures used in the structure of solar cells.

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探究锗烯在太阳能电池中的应用潜力:关于非晶/晶硅结构的模拟研究
在太阳能电池结构中利用类似石墨烯原子排列的二维(2D)纳米带对下一代太阳能电池具有重要意义。在本研究中,锗(由锗原子组成的二维结构)被置于 ITO/锗 (1, 2, 3)/\({\hbox {MoS}}_{2}\) (n)/a-SiGe:H (i)/c-Si (P)/Au异质结太阳能电池结构作为半导体层,分别掺杂Al (锗1)、P (锗2)和In (锗3)。然后,在由锗/({/hbox {MoS}}_{2}\) (n)/a-SiGe:H (i)/c-Si (P)/Au 组成的异质结电池中作为前电极。使用 AFORS-HET 仿真工具研究了 AM1.5 光谱辐射在 300 K 温度下不同辐射强度的影响。在 1 太阳、0.1 太阳和 100 太阳辐射强度下,锗2 层的效率最高,分别为 18.64%、17.78% 和 19.56%。在拟议电池的结构中应用独立的锗烯,在辐射强度为 1 太阳、0.1 太阳和 50 太阳时的效率分别为 26.98%、25.87% 和 27.99%。结果表明,这种二维结构可以改善电池的输出参数,尤其是效率,由于其单原子厚度,对太阳能电池的功能产生了积极影响。因此,锗烯可以成为太阳能电池结构中使用的其他二维结构的新兴竞争者。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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