Review of Chalcogenide-Based Materials for Low-, Mid-, and High-Temperature Thermoelectric Applications

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-07-27 DOI:10.1007/s11664-024-11310-7
Suchitra Puthran, Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu
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Abstract

Thermoelectric materials possess the capability to convert electricity into heat and vice versa. The utilization of chlorofluorocarbons and hydrochlorofluorocarbons as thermal carrier agents in traditional cooling and air conditioning systems has sparked a surge in exploration toward pioneering refrigeration and spatial conditioning technologies. Chalcogenides, known for their capacity to amplify the thermoelectric efficiency of materials and their adaptability across a broad spectrum of temperatures, stand out as pivotal components in thermoelectric materials. Despite their existing suboptimal performance, these materials hold substantial promise as power generators and as solid-state Peltier coolers, attracting significant attention and positioning them as subjects ripe for further investigation. Categorized into alkali or alkaline earth, transition metal, and main-group chalcogenides, these materials and their respective subclasses are meticulously scrutinized to pinpoint the most suitable thermoelectric materials for specific applications with an optimal operational temperature span. In the quest for energy-efficient technologies characterized by simple designs, absence of moving components, and superior stability, thermoelectric materials play a crucial role. This review highlights the advancements in theoretical parameters as well as the figure of merit (ZT) of chalcogenide materials, emphasizing their device applications. These insights are intended to provide viable future approaches to mainstream thermoelectric materials. This review reveals that Cu2Se achieves a maximum ZT value of 2.66 at 1039 K, marking it as the top performer among transition metal chalcogenides. Conversely, SnSe, a main-group metal monochalcogenide, exhibits a ZT value of 2.8 at 773 K, whereas nanowires of the main group of bismuth chalcogenides exhibit a ZT value of 2.5 at 350 K.

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用于低、中、高温热电应用的卤化镓基材料综述
热电材料具有将电能转化为热能的能力,反之亦然。在传统的制冷和空调系统中,氯氟化碳和氢氯氟化碳被用作热载体,这引发了人们对制冷和空间调节技术的探索热潮。卤化物因其能够提高材料的热电效率以及在广泛温度范围内的适应性而闻名,是热电材料中的关键成分。尽管这些材料目前的性能并不理想,但作为发电装置和固态珀尔帖冷却器,它们仍具有广阔的发展前景,因此备受关注,并成为有待进一步研究的课题。这些材料分为碱金属或碱土金属、过渡金属和主族瑀,我们对这些材料及其各自的子类进行了细致的研究,以确定最适合特定应用的热电材料,并实现最佳的工作温度跨度。热电材料具有设计简单、无活动部件、稳定性高的特点,在追求高能效技术的过程中发挥着至关重要的作用。本综述重点介绍了卤化铝材料在理论参数和优点系数(ZT)方面的进展,并强调了其设备应用。这些见解旨在为主流热电材料提供可行的未来方法。这篇综述揭示了 Cu2Se 在 1039 K 时的最大 ZT 值为 2.66,使其成为过渡金属掺杂物中性能最佳的材料。相反,主族金属单质镓硒在 773 K 时的 ZT 值为 2.8,而主族铋镓硒的纳米线在 350 K 时的 ZT 值为 2.5。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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