{"title":"Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release","authors":"O. V. Aleksandrov","doi":"10.1134/s1063782624030011","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A quantitative model of the breakdown of MOS-structures with relatively thick (10–100 nm) gate dielectric by the mechanism of anode hydrogen release from interphase boundary Si-SiO<sub>2</sub> is proposed. The breakdown delay time is determined by dispersion transport and accumulation of hydrogen ions in the gate dielectric. It is shown that at a high concentration of hydrogen in MOS structures and electric field strength of less than ~10 MV/cm, the model satisfactorily describes breakdown delay times significantly shorter than those expected from the 1/<i>E</i> model. At higher field strengths, the breakdown is described by the anode hole injection model.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"203 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624030011","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
A quantitative model of the breakdown of MOS-structures with relatively thick (10–100 nm) gate dielectric by the mechanism of anode hydrogen release from interphase boundary Si-SiO2 is proposed. The breakdown delay time is determined by dispersion transport and accumulation of hydrogen ions in the gate dielectric. It is shown that at a high concentration of hydrogen in MOS structures and electric field strength of less than ~10 MV/cm, the model satisfactorily describes breakdown delay times significantly shorter than those expected from the 1/E model. At higher field strengths, the breakdown is described by the anode hole injection model.
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