N. A. Bekin, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin
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Abstract
Using adiabatic and one-electron approximations, the rate of multiphonon relaxation of the 1s(T2) triplet of neutral magnesium donors in silicon is estimated. The dominant scattering processes associated with interaction with LO and LA phonons are taken into account. According to calculations, the rate of multiphonon relaxation at zero temperature is of the order of 1011 s–1.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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