I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. Shugabaev, R. R. Reznik, G. E. Cirlin
{"title":"Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them","authors":"I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. Shugabaev, R. R. Reznik, G. E. Cirlin","doi":"10.1134/s1063782624030059","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624030059","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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