O. O. Permyakova, A. E. Rogozhin, A. V. Myagonkikh, K. V. Rudenko
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引用次数: 0
Abstract
The mechanism of resistive switching in Pt/HfO2(8 nm)/HfOXNY(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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