S. O. Slipchenko, A. A. Podoskin, I. V. Shushkanov, V. A. Krychkov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, N. A. Pikhtin, T. A. Bagaev, V. N. Svetogorov, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov
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引用次数: 0
Abstract
A series of low-voltage thyristor current switches based on (Al)GaAs/GaAs homo- and heterostructures with a volume charge region formed in the lightly doped p-GaAs base layer have been developed. The transient processes characteristics in pulse generation mode of nanosecond duration have been studied. It has been shown that the use of a wide-bandgap barrier based on AlGaAs at the n‑emitter/p-base junction allows reducing the minimum control current amplitude from 30 to 3 mA, and the turn-on delay time can be shortened to 6 ns. For the developed thyristor switches, a minimum transition time of 3.7–3.9 ns was demonstrated when operating in a circuit with a 1 nF capacitive load. In a circuit with a nominal 1 Ω resistive load, the thyristor switches provided a peak current of 17.5 A with a pulse duration of 3.7 ns.
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