L. A. Snigirev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev
{"title":"Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs","authors":"L. A. Snigirev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev","doi":"10.1134/s1063782624030151","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs<sub>0.97</sub>Sb<sub>0.03</sub> grown by low-temperature (150°C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250°C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs<sub>0.97</sub>Sb<sub>0.03</sub> grown at 150<b>°</b>C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"70 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624030151","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs0.97Sb0.03 grown by low-temperature (150°C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250°C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs0.97Sb0.03 grown at 150°C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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