A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov
{"title":"Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates","authors":"A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov","doi":"10.1134/s1063782624020064","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An experimental study of the structural characteristics of the surface and the parameters of hardness and elastic modulus of thin AlGaN films grown on nano-SiC/Si hybrid substrates was carried out. AlGaN layers on nano-SiC on Si with orientations (001), (011), and (111) have been investigated using atomic force microscopy and nanoindentation method. It is shown that the orientation of the Si substrate has a significant effect on the surface structure of AlGaN films and the elastic modulus parameter of AlGaN near the surface. The surface roughness and structural characteristics of AlGaN layers grown on nano-SiC on Si hybrid substrates have been determined. The elastic modulus parameters of AlGaN films near the surface and in the film volume have been measured. The hardness parameters of AlGaN thin films on nano-SiC on Si were experimentally determined.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624020064","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
An experimental study of the structural characteristics of the surface and the parameters of hardness and elastic modulus of thin AlGaN films grown on nano-SiC/Si hybrid substrates was carried out. AlGaN layers on nano-SiC on Si with orientations (001), (011), and (111) have been investigated using atomic force microscopy and nanoindentation method. It is shown that the orientation of the Si substrate has a significant effect on the surface structure of AlGaN films and the elastic modulus parameter of AlGaN near the surface. The surface roughness and structural characteristics of AlGaN layers grown on nano-SiC on Si hybrid substrates have been determined. The elastic modulus parameters of AlGaN films near the surface and in the film volume have been measured. The hardness parameters of AlGaN thin films on nano-SiC on Si were experimentally determined.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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