A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, V. A. Krychkov, A. E. Grishin, N. A. Pikhtin
{"title":"Dynamics of Laser Generation in Single-Mode Microstripe Semiconductor Laser Bar (1065 nm) Operating in Gain-Swithching Mode","authors":"A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, V. A. Krychkov, A. E. Grishin, N. A. Pikhtin","doi":"10.1134/s106378262402012x","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under sub-nanosecond current pulse pumping conditions. For microstripe bars with different filling densities of the emitting aperture, the effect of time delay dispersion of various stripes’ turn-on is demonstrated, with a maximum difference up to 50 ps. The developed microstripe bar designs demonstrate stable zero mode lasing. The microstripe bar consisting of 10 stripes with a 6 μm width and a stripe period of 20 μm demonstrates pulses with a peak power of 3 W and a duration of 140 ps under 0.4 ns current pulses pumping.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"62 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s106378262402012x","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under sub-nanosecond current pulse pumping conditions. For microstripe bars with different filling densities of the emitting aperture, the effect of time delay dispersion of various stripes’ turn-on is demonstrated, with a maximum difference up to 50 ps. The developed microstripe bar designs demonstrate stable zero mode lasing. The microstripe bar consisting of 10 stripes with a 6 μm width and a stripe period of 20 μm demonstrates pulses with a peak power of 3 W and a duration of 140 ps under 0.4 ns current pulses pumping.
期刊介绍:
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.