A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov
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引用次数: 0
Abstract
Experiments on the growth of self-assembled InP/GaInP2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO2 and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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