Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s1063782624010020
V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, Yu. E. Kitaev, S. S. Sharofidinov, A. A. Lebedev, D. Yu. Panov, V. A. Spiridonov, D. A. Bauman, A. E. Romanov, V. V. Kozlovski
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Abstract

Proton irradiation of β-Ga2O3 crystals has been established to lead to a significant increase in the amount of Cr3+ ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr3+ ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr3+ ions in the β-Ga2O3 matrix has been found. The results obtained indicate the potential possibility of using β-Ga2O3 crystals as optical dosimeters of proton irradiation.

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质子辐照 β-Ga2O3 中 Cr3+ 杂质发光的研究
摘要 β-Ga2O3晶体经质子辐照后,发光中活跃的Cr3+离子数量显著增加。利用角度分辨发光法研究了 Cr3+ 离子的光谱特征。研究发现,光致发光光谱和相关选择规则对 β-Ga2O3 基体中 Cr3+ 离子的局部对称性非常敏感。研究结果表明,将 β-Ga2O3 晶体用作质子辐照的光学剂量计具有潜在的可能性。
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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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