{"title":"Convergence of Plasmon and Electron Transition Energies in Crystal Bi0.6Sb1.4Te3","authors":"N. P. Stepanov","doi":"10.1134/s1063782624010159","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The temperature dependences of the reflection coefficient spectra in the range of effects caused by the resonant behavior of the plasma of free charge carriers of the Bi<sub>0.6</sub>Sb<sub>1.4</sub>Te<sub>3</sub> crystal, in the temperature dependences of the magnetic susceptibility of which features are observed, are investigated. A change in the shape of the plasma edge and the resulting splitting of the peak of the energy loss function were detected, which allows us to conclude that an electron-plasmon interaction affecting the state of the electronic system has been observed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624010159","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The temperature dependences of the reflection coefficient spectra in the range of effects caused by the resonant behavior of the plasma of free charge carriers of the Bi0.6Sb1.4Te3 crystal, in the temperature dependences of the magnetic susceptibility of which features are observed, are investigated. A change in the shape of the plasma edge and the resulting splitting of the peak of the energy loss function were detected, which allows us to conclude that an electron-plasmon interaction affecting the state of the electronic system has been observed.
期刊介绍:
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.