M. Asadullah Nadir, Muhammad Khalid, Muhammad Younas, M. G. B. Ashiq, Arshi, Imen Kebaili, Burhanuddin, Hafsa Najam
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引用次数: 0
Abstract
In this paper, Neodymium-doped Bismuth pyrochlore and its hybridized mixed phases (NdxBi2-xSn2O7 and Bi2O3–SnO2) were synthesized using the sol–gel autocombustion method. The synthesized material was annealed at 600 °C for three hours in a muffle furnace to ensure its crystalline structure, and X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis were conducted. Fourier Transform Infrared (FTIR) spectroscopy was employed to predict the phases and absorption frequencies. Subsequent to a comprehensive structural analysis, the dielectric properties, encompassing the real and imaginary components of Impedance, Electric modulus, dielectric constant, and tangent loss, were analyzed. This analysis spanned a frequency range from 1 MHz to 3 GHz, covering different doping concentrations. Notably, the maximum dielectric constant was attained for a doping concentration of x = 1.0 at 2.7 GHz. Conclusively, the obtained dielectric data suggest that the synthesized material holds promise for various applications, including high-frequency electronics, telecommunications, and wireless communication systems.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.