Effect of W/Cr co-doping on electrical properties of Ca0.94Ce0.06Bi4Ti4O15 high-temperature piezoceramics

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-11 DOI:10.1007/s10854-024-13847-z

Qilai Wen, Zong-Yang Shen, Haosong Wu, Zhumei Wang, Tao Zeng, Wenqin Luo, Fusheng Song, Yueming Li

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Abstract

Ca_0.94Ce_0.06Bi₄Ti_4-x(W_1/3Cr_2/3)_xO₁₅ (CCBT-WC_x, x = 0.00–0.10) ceramics were prepared by a solid-state sintering method, and the effect of W/Cr co-doping on the structure and electrical properties of the ceramics was systematically investigated. An enhanced piezoelectric constant d₃₃ (22.1 pC/N) was achieved at the optimized composition with x = 0.04, which increased by 35% as compared to that of pure CCBT ceramics due to more effective distortion of the titanium-oxygen octahedron induced by W/Cr co-doping. Moreover, after annealing at 500 °C, the d₃₃ (21.0 pC/N) of CCBT-WC_0.04 ceramics still remained 95% of its initial value, exhibiting excellent annealing thermal stability. In addition to a high Curie temperature (T_C = 768 °C), this ceramic should be very promising for high-temperature sensor applications.

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W/Cr 共掺对 Ca0.94Ce0.06Bi4Ti4O15 高温压电陶瓷电气性能的影响

采用固态烧结法制备了 Ca0.94Ce0.06Bi4Ti4-x(W1/3Cr2/3)xO15（CCBT-WCx，x = 0.00-0.10）陶瓷，并系统研究了 W/Cr 共掺杂对陶瓷结构和电性能的影响。在 x = 0.04 的优化组合中，压电常数 d33（22.1 pC/N）得到了增强，与纯 CCBT 陶瓷相比增加了 35%，这是由于 W/Cr 共掺引起了钛氧八面体更有效的变形。此外，在 500 °C 退火后，CCBT-WC0.04 陶瓷的 d33（21.0 pC/N）仍保持在初始值的 95%，表现出优异的退火热稳定性。除了居里温度高（TC = 768 ℃）之外，这种陶瓷在高温传感器应用方面也大有可为。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.