Features of Formation of InxGa1 – xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030072
M. A. Kalinnikov, D. N. Lobanov, K. E. Kudryavtsev, B. A. Andreev, P. A. Yunin, L. V. Krasilnikova, A. V. Novikov, E. V. Skorokhodov, Z. F. Skorokhodov
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Abstract

In this paper, the features of the formation of bulk InGaN layers with an indium content of ~ 60% in the immiscibility gap of InGaN ternary solid solutions by the method of molecular-beam epitaxy with plasma nitrogen activation are studied. The structures under study were grown on sapphire substrates, while the epitaxy temperature and the ratio of metal (In + Ga) and activated (atomic) nitrogen fluxes were varied. It has been demonstrated that the rates of thermal decomposition and phase separation for In0.6Ga0.4N ternary solutions depend nonmonotonically on the growth temperature in the range Tgr = 430–470°C. It is shown that InGaN thermal decomposition processes occur on the growth surface and lead to the appearance of surface phases of metallic In and binary InN, while phase separation leads to the appearance of InGaN phases of various compositions throughout the volume of the deposited InGaN layer. It is shown that, in the temperature range under study, phase separation is determined by surface diffusion, which can be suppressed by growth under highly nitrogen-enriched conditions, which made it possible to obtain homogeneous InGaN layers with an In content of In ~ 60% during high-temperature (Tgr = 470°C) growth. It is shown that the suppression of InGaN thermal decomposition processes is decisive in achieving effective interband luminescence of the obtained structures, while the presence of phase separation affects the radiative properties of InGaN layers to a lesser extent, at least in the region of low (T = 77 K) temperatures.

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等离子氮活化分子束外延法在固溶体(x ~ 0.6)不溶间隙中形成 InxGa1 - xN 块状层的特征
摘要 本文研究了利用等离子氮活化分子束外延方法在 InGaN 三元固溶体的不溶隙中形成铟含量约为 60% 的 InGaN 体层的特点。所研究的结构生长在蓝宝石衬底上,外延温度以及金属(In + Ga)和活化(原子)氮通量的比例各不相同。研究表明,在 Tgr = 430-470°C 的范围内,In0.6Ga0.4N 三元溶液的热分解率和相分离率与生长温度非单调相关。研究表明,InGaN 的热分解过程发生在生长表面,并导致金属 In 和二元 InN 表面相的出现,而相分离则导致在整个沉积 InGaN 层体积中出现不同成分的 InGaN 相。研究表明,在研究的温度范围内,相分离是由表面扩散决定的,在高富氮条件下生长可以抑制表面扩散,这使得在高温(Tgr = 470°C)生长过程中获得 In 含量为 In ~ 60% 的均匀 InGaN 层成为可能。研究表明,InGaN 热分解过程的抑制对于所获得结构实现有效的带间发光起着决定性作用,而相分离的存在对 InGaN 层辐射特性的影响较小,至少在低温(T = 77 K)区域是如此。
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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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