{"title":"Application of cobalt-sulphide to suppress charge recombinations in polymer solar cell","authors":"","doi":"10.1016/j.mssp.2024.108917","DOIUrl":null,"url":null,"abstract":"<div><p>Cobalt-sulphide nano-particles were synthesized and employed in absorber layer of thin film organic solar cells (TFOSCs). The incorporation of nano-particles was designed to assist exciton dissociation processes and boost the collection photo-generated currents in TFOSC. Solar cells were fabricated from polymers blend photo-active layer consisting of Poly[[4,8- bis[(2-ethylhexyl) oxy] benzo[1,2-b:4,5-b] dithiophene2,6-diyl] [3 -fluoro-2-[(2- ethylhexyl)carbonyl]thieno[3,4- b] thiophenediyl]] (PTB7)and [6,6]-phenyl C<sub>71</sub>-butyric acid methyl ester (PC<sub>71</sub>BM) with/without the incorporation CoS. The optical and electrical properties of the active layers are found to be highly impacted by the inclusion of CoS NPs in the medium. Consequently, significant improvement on the collection of photo-currents was recorded that led to high power conversion efficiency of the devices compared to the reference cell. The influence of CoS nano-particles is found to be dependent on its concentration in the medium where the best solar cell performance recorded, in this experiment, was at 1wt% CoS, which brings about an increase in efficiency by 37%.</p></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S1369800124008138/pdfft?md5=1d5fb0825a600e76ef9eb21bed4ef50f&pid=1-s2.0-S1369800124008138-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124008138","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Cobalt-sulphide nano-particles were synthesized and employed in absorber layer of thin film organic solar cells (TFOSCs). The incorporation of nano-particles was designed to assist exciton dissociation processes and boost the collection photo-generated currents in TFOSC. Solar cells were fabricated from polymers blend photo-active layer consisting of Poly[[4,8- bis[(2-ethylhexyl) oxy] benzo[1,2-b:4,5-b] dithiophene2,6-diyl] [3 -fluoro-2-[(2- ethylhexyl)carbonyl]thieno[3,4- b] thiophenediyl]] (PTB7)and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) with/without the incorporation CoS. The optical and electrical properties of the active layers are found to be highly impacted by the inclusion of CoS NPs in the medium. Consequently, significant improvement on the collection of photo-currents was recorded that led to high power conversion efficiency of the devices compared to the reference cell. The influence of CoS nano-particles is found to be dependent on its concentration in the medium where the best solar cell performance recorded, in this experiment, was at 1wt% CoS, which brings about an increase in efficiency by 37%.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.