Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050105

A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein

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Abstract

The carrier removal rates during proton and electron irradiations of n-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф_р ≤ 5 × 10¹⁴ cm^–2; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф_n ≤ 5 × 10¹⁶ cm^–2. The value of the removal rate during proton irradiation, η_p ≈ 140 cm^–1, is close to the lower limit of currently known values of η_p and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η_e is ≈0.47 cm^–1 and corresponds to the typical values of η_e for type gallium nitride obtained by various methods.

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质子和电子辐照对氮化镓肖特基二极管参数的影响

摘要测定了通过金属有机物气相外延生长的 n 型氮化镓在质子和电子辐照过程中的载流子去除率。用能量为 15 MeV 的质子辐照时，辐照流范围为 0 ≤ Фр ≤ 5 × 1014 cm-2；用能量为 0.9 MeV 的电子辐照时，辐照流范围为 0 ≤ Фn ≤ 5 × 1016 cm-2。质子辐照时的去除率ηp ≈ 140 cm-1，接近目前已知的ηp值的下限，表明所研究材料对质子辐照具有足够高的抗辐射能力。在电子辐照影响下的载流子去除率 ηe ≈0.47 cm-1，与通过各种方法获得的氮化镓类型的 ηe 典型值一致。

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.