Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050129
A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev
{"title":"Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures","authors":"A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev","doi":"10.1134/s1063782624050129","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO<sub>4</sub> with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1–1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density <i>j =</i> 5.7 × 10<sup>–2</sup> A/cm<sup>2</sup> and the typical current density <i>j =</i> 15.5 × 10<sup>–2</sup> A/cm<sup>2</sup>. The maximum value of <i>R</i><sub>0</sub> at room temperature is 1654 Ohm, while the <i>R</i><sub>0</sub><i>A</i> product reaches 1.17 Ohm cm<sup>2</sup>.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050129","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract

A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO4 with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1–1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density j = 5.7 × 10–2 A/cm2 and the typical current density j = 15.5 × 10–2 A/cm2. The maximum value of R0 at room temperature is 1654 Ohm, while the R0A product reaches 1.17 Ohm cm2.

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开发一种蚀刻 InAs/InAsSbP 光电二极管异质结构的方法
摘要 提出了一种使用新型精密蚀刻剂 HBr : KMnO4 以较低的恒定蚀刻速率蚀刻 InAs/InAsSbP 光电二极管异质结构的方法。蚀刻液成分比例的改变使得蚀刻速率可以设定在 0.1-1.6 μm/min 的范围内,而不会降低侧面半导体表面的质量。使用新蚀刻剂后,InAs/InAsSbP 光电二极管的反向暗电流以及暗电流值在器件之间的扩散均有所降低。敏感区域直径为 300 μm 的样品显示出最小电流密度 j = 5.7 × 10-2 A/cm2,典型电流密度 j = 15.5 × 10-2 A/cm2。室温下 R0 的最大值为 1654 欧姆,而 R0A 的乘积达到 1.17 欧姆 cm2。
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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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