{"title":"Analysis of Stability of Generation in Quantum Well Lasers","authors":"Z. N. Sokolova, L. V. Asryan","doi":"10.1134/s1063782624050154","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A stability analysis of two modes of generation in semiconductor quantum well lasers is performed. These modes correspond to two solutions of the rate equations obtained by taking into account the internal optical loss that depends on the density of charge carriers injected into the laser waveguide region and, hence, on the injection current. It is shown that, in contrast to the first (“conventional”) mode of generation, which is always stable and hence observable, the second (“additional”) mode, which is entirely due to the internal loss that depends on the carrier density, is unstable and hence cannot be observed under the steady-state conditions in the laser structure considered in this work.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"16 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050154","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
A stability analysis of two modes of generation in semiconductor quantum well lasers is performed. These modes correspond to two solutions of the rate equations obtained by taking into account the internal optical loss that depends on the density of charge carriers injected into the laser waveguide region and, hence, on the injection current. It is shown that, in contrast to the first (“conventional”) mode of generation, which is always stable and hence observable, the second (“additional”) mode, which is entirely due to the internal loss that depends on the carrier density, is unstable and hence cannot be observed under the steady-state conditions in the laser structure considered in this work.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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