Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050178
M. N. Zhuravlev, V. I. Egorkin
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Abstract

Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.

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基于硅衬底氮化镓/氮化铝/氮化镓异质结构的场 p 沟道晶体管
摘要 研究了基于氮化镓/氮化铝/氮化镓异质结构的各种类型的 p 沟道场效应晶体管。沟道由极化诱导的二维空穴气体形成。研究表明,在栅极由来自衬底一侧的二维电子气体形成的晶体管中,可以观察到最高的饱和电流和跨导值。
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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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