Triboelectric Generation by Friction of Heavily Doped Diamond Probes on a p-Si Surface

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040018
P. A. Alekseev, D. D. Sakhno, M. S. Dunaevskiy
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Abstract

The generation of triboelectric current during friction of diamond probes on the surface of p-Si substrates with a native oxide layer was studied. The choice of probes with different doping, as well as substrates with different surface orientations, made it possible to establish the determining influence of the probe-surface work functions difference on the direction and value of the triboelectric current. The generation of triboelectric current occurs due to the tunneling of non-equilibrium charge carriers resulting from the chemical bonds breaking during friction. Under illumination conditions, an increase in the triboelectric current was observed, as well as the photocurrent appearance due to the charge carriers separation in the space charge region.

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对硅表面摩擦重掺杂金刚石探针产生三电能
摘要 研究了金刚石探针在具有原生氧化层的对硅衬底表面摩擦时产生的三电流。通过选择不同掺杂程度的探针以及不同表面取向的衬底,可以确定探针-表面功函数差对三电流方向和数值的决定性影响。摩擦过程中化学键断裂产生的非平衡电荷载流子隧穿导致了三电电流的产生。在光照条件下,观察到三电势电流增加,以及由于空间电荷区的电荷载流子分离而出现的光电流。
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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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