A. K. Kaveev, V. V. Fedorov, L. N. Dvoretckaya, S. V. Fedina, I. S. Mukhin
{"title":"Formation of Single and Heterostructured Nanowires Based on InAs1 – xPx Solid Solutions on Si(111)","authors":"A. K. Kaveev, V. V. Fedorov, L. N. Dvoretckaya, S. V. Fedina, I. S. Mukhin","doi":"10.1134/s1063782624040080","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]<sub>NWs</sub> || [111]<sub>Si</sub>, [<span>\\(11\\bar {2}0\\)</span>]<sub>NWs</sub> || [<span>\\(1\\bar {1}0\\)</span>]<sub>Si</sub>. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (<100 nm) segments of the InAs<sub>1 –</sub> <sub><i>x</i></sub>P<sub><i>x</i></sub> solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%).</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"46 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624040080","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]NWs || [111]Si, [\(11\bar {2}0\)]NWs || [\(1\bar {1}0\)]Si. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (<100 nm) segments of the InAs1 –xPx solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%).
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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