Defects in GaInAsBi Epitaxial Films on Si(001) Substrates

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040110
A. S. Pashchenko, O. V. Devitsky, M. L. Lunina
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Abstract

Growth of a thin GalnAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer–Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 Å. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.

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硅(001)基底上 GaInAsBi 外延薄膜中的缺陷
摘要 通过脉冲激光沉积法在硅 (001) 基底上生长了 GalnAsBi 薄膜。生长是在 Volmer-Weber 条件下进行的。晶粒主要是单相的,但被位错网络分隔开来,在某些区域还存在反相边界。通过透射电子显微镜和 X 射线衍射仪对实际结构的研究表明,由于塑性剪切,位错成核、紧密堆积的{111}平面滑移,以及孪晶和表面粗糙度的变化,导致了应力松弛。原子力显微镜测量的薄膜表面均方根粗糙度为 0.51 nm。
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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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