Formation of Bound States and Control of Their Localization in a Double Quantum Dot at the Edge of the Two-Dimensional Topological Insulator with Magnetic Barriers
E. A. Lavrukhina, D. V. Khomitsky, A. V. Telezhnikov
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Abstract
The model of the bound states in a double quantum dot formed by three magnetic barriers at the edge of two-dimensional topological insulator based on HgTe/CdTe quantum well is developed. The peculiarities of the energy spectrum, the probability density and the spin density of the quantum states are studied as a function of the orientation of the magnetization vector for the magnetic barriers. The wavefunction localization at the left and at the right of the anticrossing point in the spectrum is studied and the conclusion is made on the possibility of switching between the states with the localization area in different quantum dots by varying the polarization of the middle barrier.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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