{"title":"Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs","authors":"M. M. Sobolev, F. Yu. Soldatenkov","doi":"10.1134/s1063782624040146","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>High-voltage gradual <i>p</i><sup>0</sup>–<i>i</i>–<i>n</i><sup>0</sup> junctions of Al<sub><i>x</i></sub>Ga<sub>1 –</sub> <sub><i>x</i></sub>As<sub>1 –</sub> <sub><i>y</i></sub>Sb<sub><i>y</i></sub> with <i>x</i> ~ 0.24 and <i>y</i> ~ 0.05 in the <i>i</i>‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the <i>DX</i>-center of the Si donor impurity, with a thermal activation energy <i>E</i><sub><i>t</i></sub> = 414 meV, a capture cross section σ<sub><i>n</i></sub> = 1.04 × 10<sup>–14</sup> cm<sup>2</sup>, and a concentration <i>N</i><sub><i>d</i></sub> = 2.4 × 10<sup>15</sup> cm<sup>–3</sup>. In the heterostructures studied, there were no deep levels associated with dislocations.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"97 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624040146","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
Abstract—
High-voltage gradual p0–i–n0 junctions of AlxGa1 –xAs1 –ySby with x ~ 0.24 and y ~ 0.05 in the i‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the DX-center of the Si donor impurity, with a thermal activation energy Et = 414 meV, a capture cross section σn = 1.04 × 10–14 cm2, and a concentration Nd = 2.4 × 1015 cm–3. In the heterostructures studied, there were no deep levels associated with dislocations.
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