D. A. Zdoroveyshchev, O. V. Vikhrova, Yu. A. Danilov, V. P. Lesnikov, A. V. Nezhdanov, A. E. Parafin, S. M. Plankina
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引用次数: 0
Abstract
Pulsed laser deposition in vacuum at 220°C of GaAs layers heavily doped with Mn and/or Bi has been used to form nanostructures on i-GaAs (100) substrates. It is shown that, for the electrical activation of manganese, it is expedient to use subsequent annealing with an excimer laser pulse with a wavelength of 248 nm and a duration of 30 ns. The structures show an anomalous Hall effect with a hysteresis loop on the magnetic field dependence up to a Curie temperature of about ~70 K. Negative magnetoresistance is observed up to temperatures of ≈150 K. Bismuth does not prevent the activation of Mn atoms during annealing and contributes to an increase in the coercive field of the GaMnAs ferromagnetic semiconductor.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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