{"title":"Transport Characteristics Calculation of Bilayer Graphene with Different Misorientation Angle","authors":"S. V. Khazanova, V. V. Savel’ev","doi":"10.1134/s1063782624040092","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work a bilayer moiré graphene structure with a spatial period of energy parameters change of the ten nanometers order is considered. The layer misorientation angle effect and the energy gap parameter on the current-voltage characteristic of the structure is studied numerically. The transmission coefficients calculation through the structure demonstrates the appearance of energy gaps, the magnitude of which depends on the misorientation angle of the layers.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"37 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624040092","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
In this work a bilayer moiré graphene structure with a spatial period of energy parameters change of the ten nanometers order is considered. The layer misorientation angle effect and the energy gap parameter on the current-voltage characteristic of the structure is studied numerically. The transmission coefficients calculation through the structure demonstrates the appearance of energy gaps, the magnitude of which depends on the misorientation angle of the layers.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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