{"title":"Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe","authors":"M. S. Zholudev, D. V. Kozlov, S. V. Morozov","doi":"10.1134/s1063782624050166","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Localized and resonant state energies of double Coulomb acceptor in narrow-gap HgCdTe alloys are calculated. The simulation is made with scattering matrix technique within spherically symmetric three-band Kane model taking into account conduction band and two top valence bands. It is shown that appearance one-particle state is highly unlikely when the two-particle state is resonant.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050166","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Localized and resonant state energies of double Coulomb acceptor in narrow-gap HgCdTe alloys are calculated. The simulation is made with scattering matrix technique within spherically symmetric three-band Kane model taking into account conduction band and two top valence bands. It is shown that appearance one-particle state is highly unlikely when the two-particle state is resonant.
期刊介绍:
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.