Jinye Yao , Shihao Guo , Li Wang , Min Shang , Xiangxu Chen , Haoran Ma , Yunpeng Wang , Haitao Ma
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引用次数: 0
Abstract
Amorphous NiP layers have been employed as barrier layers to regulate the formation and growth of intermetallic compounds (IMCs) within industrial contexts. The doping of Ni atoms into the crystal structure of η'-Cu6Sn5 resulted in the formation of the IMC of η'- (Cu,Ni)6Sn5. An examination of the mechanical properties of IMCs is crucial for the evaluation of solder joint longevity. Based on first-principles calculations and VRH methods, the bulk modulus, shear modulus and the elastic modulus and hardness values of η'-Cu6Sn5, η'-Cu5.75Ni0.25Sn5, η'-Cu5.5Ni0.5Sn5 and η'-Cu5.25Ni0.75Sn5 IMCs were analyzed, which showed that η'- (Cu,Ni)6Sn5 possessed a stronger anisotropy and hardness. The KIC of all η'-Cu6Sn5-based IMCs are 1.830, 1.933, 1.961, and 1.960, respectively, indicating that the doping of Ni atoms into the η'-Cu6Sn5 cells can favourably affect their mechanical properties reducing the likelihood of microcracking at the interface during use and increasing the shear resistance of the joint. The thermodynamic disorder parameter (TDOS) for all η'-Cu6Sn5-based IMCs is primarily influenced by the Sn-s and Cu-d states, which exhibit metallic properties. It has been demonstrated that the compound η'- (Cu,Ni)6Sn5 is more stable than the compound η'-Cu6Sn5. This phenomenon can be attributed to the formation of robust covalent bonds between the Ni atoms and their neighbouring Cu and Sn atoms, which occurs when Ni atoms are doped. The findings of this research can serve as a valuable reference point and theoretical foundation for future applications of NiP barrier layers in soldering.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.