{"title":"Study of the characteristics and growth of tin whiskers in orbit","authors":"Shinichiro Ichimaru , Tsuyoshi Nakagawa , Norio Nemoto , Katsuaki Suganuma , Hiroaki Tatsumi , Hiroshi Nishikawa","doi":"10.1016/j.microrel.2024.115523","DOIUrl":null,"url":null,"abstract":"<div><div>To confirm the applicability of tin-based lead-free parts in satellites, we validated the growth characteristics of tin whiskers in orbit. The result was that the tin whiskers generated on the in-orbit samples grew thin, long, and straight. The longest tin whisker observed in the in-orbit samples was approximately 767 μm. There were fine striation rings on the side face of the tin whisker in the in-orbit samples. This characteristic is the tin whiskers generated by thermal cycling. In addition, the growth characteristics of tin whiskers in orbit and on the ground in air differed. However, tin whiskers in orbit and on the ground in a vacuum exhibited the same growth characteristics. These results indicate that thermal cycling and vacuum (i.e., no oxygen) significantly influence the growth and shape of tin whiskers in orbit. Cross-sectional scanning electron microscope showed that on the in-orbit samples, the tin plating grains were neatly arranged, and no deep grooves along the tin plating grain boundaries were identified; whereas, on the ground in air, the tin plating grain boundaries were cracked, and the interfaces with adjacent grains were separated. Therefore, tin atoms diffused more easily in orbit because of the fine alignment of the tin plating grains; many very long tin whiskers were generated in orbit.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115523"},"PeriodicalIF":1.6000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002038","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
To confirm the applicability of tin-based lead-free parts in satellites, we validated the growth characteristics of tin whiskers in orbit. The result was that the tin whiskers generated on the in-orbit samples grew thin, long, and straight. The longest tin whisker observed in the in-orbit samples was approximately 767 μm. There were fine striation rings on the side face of the tin whisker in the in-orbit samples. This characteristic is the tin whiskers generated by thermal cycling. In addition, the growth characteristics of tin whiskers in orbit and on the ground in air differed. However, tin whiskers in orbit and on the ground in a vacuum exhibited the same growth characteristics. These results indicate that thermal cycling and vacuum (i.e., no oxygen) significantly influence the growth and shape of tin whiskers in orbit. Cross-sectional scanning electron microscope showed that on the in-orbit samples, the tin plating grains were neatly arranged, and no deep grooves along the tin plating grain boundaries were identified; whereas, on the ground in air, the tin plating grain boundaries were cracked, and the interfaces with adjacent grains were separated. Therefore, tin atoms diffused more easily in orbit because of the fine alignment of the tin plating grains; many very long tin whiskers were generated in orbit.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.