Mitigating current crowding for enhanced reliability of AlGaN-based deep-ultraviolet LEDs through triangular island-shaped p-electrode design

IF 4.6 2区 物理与天体物理 Q1 OPTICS Optics and Laser Technology Pub Date : 2024-10-29 DOI:10.1016/j.optlastec.2024.112026
Yifang Chen , Quanjiang Lv , Ju Liu , Xu Huang , Yiwei Cao , Tianpeng Yang , Tingting Mi , Xiaowen Wang , Junlin Liu
{"title":"Mitigating current crowding for enhanced reliability of AlGaN-based deep-ultraviolet LEDs through triangular island-shaped p-electrode design","authors":"Yifang Chen ,&nbsp;Quanjiang Lv ,&nbsp;Ju Liu ,&nbsp;Xu Huang ,&nbsp;Yiwei Cao ,&nbsp;Tianpeng Yang ,&nbsp;Tingting Mi ,&nbsp;Xiaowen Wang ,&nbsp;Junlin Liu","doi":"10.1016/j.optlastec.2024.112026","DOIUrl":null,"url":null,"abstract":"<div><div>Current crowding and poor reliability due to uneven current distribution are significant challenges limiting the widespread application of AlGaN-based flip-chip deep-ultraviolet (DUV) LEDs. Herein, a novel triangular island-shaped chip structure designed to mitigate current crowding and enhance device reliability. Although this structure exhibits increased leakage current due to etching damage and the reduced effective light-emitting area compared to the interdigitated structure, it demonstrates lower operating voltage and higher wall-plug efficiency at high currents. Optical emission distribution tests confirm that the triangular island-shaped structure effectively reduces current crowding and achieves uniform light emission. After 500 h of aging, the optical power retention of the triangular island-shaped structure remains at 97.6%, and the L70 lifetime, as predicted by a lifetime model, is extended by 45% compared to the interdigitated structure. These findings highlight the critical role of mitigating current crowding in improving the reliability of AlGaN-based DUV LED chip structures.</div></div>","PeriodicalId":19511,"journal":{"name":"Optics and Laser Technology","volume":"181 ","pages":"Article 112026"},"PeriodicalIF":4.6000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Laser Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030399224014841","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0

Abstract

Current crowding and poor reliability due to uneven current distribution are significant challenges limiting the widespread application of AlGaN-based flip-chip deep-ultraviolet (DUV) LEDs. Herein, a novel triangular island-shaped chip structure designed to mitigate current crowding and enhance device reliability. Although this structure exhibits increased leakage current due to etching damage and the reduced effective light-emitting area compared to the interdigitated structure, it demonstrates lower operating voltage and higher wall-plug efficiency at high currents. Optical emission distribution tests confirm that the triangular island-shaped structure effectively reduces current crowding and achieves uniform light emission. After 500 h of aging, the optical power retention of the triangular island-shaped structure remains at 97.6%, and the L70 lifetime, as predicted by a lifetime model, is extended by 45% compared to the interdigitated structure. These findings highlight the critical role of mitigating current crowding in improving the reliability of AlGaN-based DUV LED chip structures.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过三角岛形 p 型电极设计缓解电流拥挤,提高氮化铝基深紫外 LED 的可靠性
电流拥挤和电流分布不均导致的可靠性差是限制基于氮化铝的倒装芯片深紫外(DUV)发光二极管广泛应用的重大挑战。本文介绍了一种新颖的三角形岛状芯片结构,旨在缓解电流拥挤并提高器件可靠性。虽然这种结构会因蚀刻损伤和有效发光面积减小而导致漏电流增加,但与相互咬合的结构相比,它在大电流条件下的工作电压更低,壁插效率更高。光学发射分布测试证实,三角形岛状结构能有效减少电流拥挤,实现均匀发光。老化 500 小时后,三角岛形结构的光功率保持率仍为 97.6%,根据寿命模型预测的 L70 寿命比插接结构延长了 45%。这些发现凸显了减轻电流拥挤对提高基于氮化铝的 DUV LED 芯片结构可靠性的关键作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
8.50
自引率
10.00%
发文量
1060
审稿时长
3.4 months
期刊介绍: Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication. The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas: •development in all types of lasers •developments in optoelectronic devices and photonics •developments in new photonics and optical concepts •developments in conventional optics, optical instruments and components •techniques of optical metrology, including interferometry and optical fibre sensors •LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow •applications of lasers to materials processing, optical NDT display (including holography) and optical communication •research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume) •developments in optical computing and optical information processing •developments in new optical materials •developments in new optical characterization methods and techniques •developments in quantum optics •developments in light assisted micro and nanofabrication methods and techniques •developments in nanophotonics and biophotonics •developments in imaging processing and systems
期刊最新文献
Editorial Board Supercontinuum generation in singlemode fibers using dissipative soliton resonance pulses at 1560 nm Porosity, texture, and mechanical properties of pure copper fabricated by fine green laser powder bed fusion Mitigating current crowding for enhanced reliability of AlGaN-based deep-ultraviolet LEDs through triangular island-shaped p-electrode design Mode-locked erbium-doped fiber laser based on stable narrow-gap semiconductor Nb2SiTe4 quantum dots
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1