Enhanced performance of perovskite solar cells using ZnO electron transport layer prepared under simultaneous UV irradiation and magnetic field

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-09 DOI:10.1007/s10854-024-13776-x

Lougen M. Chalabi, Aicha Loucif, Anwar Q. Alanazi, Sultan M. Alenzi, Abdulrahman Albadri

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Abstract

In this study, we present a novel approach to improve the performance of perovskite solar cells (PSCs) by exploring the synergistic effects of ultraviolet (UV) light and magnetic field (MF) exposure on the properties of ZnO thin films. These films serve as the electron transport layer (ETL) in PSCs. The ZnO thin were synthesized via a dip coating method. During the deposition process, the films were subjected to UV light (ZnO:UV), magnetic field (ZnO:MF), and a combination of UV and MF (ZnO:(UV + MF)) treatments. Our findings demonstrate that the ZnO:(UV + MF) film has an average transparency of 92% in the visible region, a high degree of crystallinity, and a broadened optical bandgap (3.69 eV). The current density–voltage characteristics of the four fabricated devices, using the untreated and treated ZnO thin films as ETLs, revealed an efficiency of approximately 10.80% when using ZnO:(UV + MF) as the ETL, surpassing the efficiency of 7.31% observed for the device with untreated ZnO ETL.

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利用在紫外线和磁场同时照射下制备的氧化锌电子传输层提高过氧化物太阳能电池的性能

在本研究中，我们提出了一种新方法，通过探索紫外线（UV）和磁场（MF）照射对氧化锌薄膜特性的协同效应来提高过氧化物太阳能电池（PSCs）的性能。这些薄膜是 PSC 中的电子传输层（ETL）。氧化锌薄膜是通过浸涂法合成的。在沉积过程中，薄膜受到紫外线（ZnO:UV）、磁场（ZnO:MF）以及紫外线和磁场组合（ZnO:(UV + MF)）的处理。我们的研究结果表明，ZnO：（UV + MF）薄膜在可见光区域的平均透明度为 92%，具有很高的结晶度和更宽的光带隙（3.69 eV）。使用未处理和处理过的氧化锌薄膜作为 ETL 的四个器件的电流密度-电压特性表明，使用 ZnO:(UV + MF) 作为 ETL 的效率约为 10.80%，超过了使用未处理过的氧化锌 ETL 的器件的 7.31% 效率。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.