Growth and characterization of semi-organic third-order nonlinear optical (NLO) succinic acid magnesium sulphate single crystals

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-20 DOI:10.1007/s10854-024-13889-3
S. Swathi, B. Samuel Ebinezer, M. Shalini, M. Meena, R. S. Sundararajan, T. C. Sabari Girisun
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Abstract

An effective growth method utilizing a slow evaporation process at room temperature has been implemented to produce the centrosymmetric semi-organic crystal of succinic acid magnesium sulphate (SAMS). The single crystal X-ray diffraction analysis indicates that the SAMS crystal exhibits a monoclinic crystal structure, with cell dimensions of a = 5.18 Å, b = 8.88 Å, c = 5.60 Å. The powder x-ray diffraction analysis indicates that the grown crystals possesses excellent crystallinity. The findings indicated a negligible level of absorption within the UV–Visible spectrum, with a lower cutoff wavelength identified at 245 nm. Furthermore, the optical band gap energy was determined to be Eg = 5.06 eV and optical transmittance spectrum demonstrated. An examination was conducted to determine the vibrational frequencies of the crystal through FT-IR spectral studies. The dielectric investigations of the crystal sample in its original state reveal a diminished dielectric constant and loss when subjected to higher frequencies. The fluorescence spectral study has been conducted to analyse the luminescence behaviour of SAMS. The analysis conducted via (SEM) provides valuable information regarding the quality of the sample and the distribution of grains on its surface. Additionally, the chemical composition of the SAMS crystal was assessed through energy-dispersive X-ray analysis. The crystal's bulk resistance and dc conductivity were determined using a Nyquist plot. The mechanical stability of the crystal was assessed using Vickers microhardness tests. The laser damage threshold (LDT) for the SAMS crystal was measured with an Nd: YAG laser functioning at a wavelength of 1064 nm. The Z-scan method, which employs an Nd: YAG laser, has been utilized to investigate third order nonlinear (SAMS). This technique demonstrates its potential for future applications in fields such as optoelectronics and optical limiting application.

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半有机三阶非线性光学 (NLO) 琥珀酸镁硫酸盐单晶体的生长与表征
利用室温下缓慢蒸发过程的有效生长方法,制备出了硫酸琥珀酸镁(SAMS)的中心对称半有机晶体。单晶 X 射线衍射分析表明,SAMS 晶体呈单斜晶体结构,晶胞尺寸为 a = 5.18 Å、b = 8.88 Å、c = 5.60 Å。研究结果表明,紫外-可见光谱中的吸收水平可以忽略不计,较低的截止波长为 245 纳米。此外,光带隙能被确定为 Eg = 5.06 eV,并显示了光学透射光谱。通过傅立叶变换红外光谱研究,确定了晶体的振动频率。对原始状态下的晶体样品进行的介电调查显示,当频率较高时,介电常数和介电损耗会减小。荧光光谱研究分析了 SAMS 的发光特性。通过扫描电子显微镜(SEM)进行的分析提供了有关样品质量及其表面晶粒分布的宝贵信息。此外,还通过能量色散 X 射线分析评估了 SAMS 晶体的化学成分。利用奈奎斯特图确定了晶体的体积电阻和直流电导。利用维氏硬度测试评估了晶体的机械稳定性。使用波长为 1064 nm 的 Nd: YAG 激光测量了 SAMS 晶体的激光损伤阈值 (LDT)。使用 Nd: YAG 激光的 Z 扫描方法已被用于研究三阶非线性(SAMS)。该技术展示了其在光电子学和光学限制应用等领域的应用潜力。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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