Eka Nurfani, Paulus Fau, Nur I. Khamidy, Resti Marlina
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引用次数: 0
Abstract
Hydrothermally synthesized manganese dioxide (MnO2) has attracted significant attention in supercapacitor applications due to its exceptional electrochemical properties. This research systematically explores the influence of hydrothermal temperatures of 105 °C (M1), 120 °C (M2), and 150 °C (M3) on the structural and electrochemical characteristics of MnO2-based supercapacitors. From field effect scanning electron microscopy (FESEM) images, the average diameter of MnO2 nanorods is 139 ± 3 nm, 140 ± 5 nm, and 156 ± 3 nm for M1, M2, and M3. The crystalline quality of MnO2 increases by increasing the hydrothermal temperature (M3 sample). Shifting the Raman peak from 637 to 654 cm−1 is observed due to the enhancement in crystallinity and nanorod size in the M3 sample. Higher surface area for smaller nanorods (M1) is also confirmed by the BET (Brunauer–Emmett–Teller) technique. At the scan rate of 10 mV/s, the specific capacitance obtained is 142 (M1), 135 (M2), and 131 (M3) F/g. By elucidating the intricate relationship between hydrothermal temperature and the resultant MnO2 properties, this study provides valuable insights for optimizing the synthesis conditions to enhance the performance of MnO2-based supercapacitors.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.