Microstructure and Raman spectra analysis of [(Zn0.8Mg0.2)1-xNix]2SiO4 microwave dielectric ceramics featuring low relative permittivity and low dielectric loss

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-05 DOI:10.1007/s10854-025-14468-w

Yuan-Bin Chen, Ling Tang

{"title":"Microstructure and Raman spectra analysis of [(Zn0.8Mg0.2)1-xNix]2SiO4 microwave dielectric ceramics featuring low relative permittivity and low dielectric loss","authors":"Yuan-Bin Chen, Ling Tang","doi":"10.1007/s10854-025-14468-w","DOIUrl":null,"url":null,"abstract":"<div>A solid-state reaction method was successfully employed to synthesize [(Zn0.8Mg0.2)1-xNix]2SiO4 microwave dielectric ceramics by partially substituting [Zn0.8Mg0.2]2+ with Ni2+ ions. XRD analysis indicated that the proportion of the primary Zn2SiO4 phase decreases with increasing Ni2+ content, while the secondary MgNi(SiO4) phase becomes predominant. This phase transition contributes to a reduction in dielectric loss. The sintering behavior, phase composition, microstructure, and microwave dielectric properties of the ceramics were systematically investigated. The incorporation of Ni2+ ions lowered the optimal sintering temperature from 1325 to 1400 °C. SEM analysis revealed that an optimal Ni2+ substitution level enhanced the grain density within the [(Zn0.8Mg0.2)1-xNix]2SiO4 ceramic matrix. The relationship between Q × f and the average grain size as well as grain uniformity was analyzed. The trend of τf is primarily governed by the total Vizn-o and Ezn-o. Additionally, the relationship between lattice vibrations, Raman shifts, and dielectric properties was investigated using Raman spectroscopy. Certainly, the [(Zn0.8Mg0.2)0.8Ni0.2]2SiO4 ceramic, sintered at 1325 °C, exhibits an exemplary set of microwave dielectric properties: an εr value of 6.8, a Q × f value of 27,185 GHz, and a τf value of − 37 ppm/ °C.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 7","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14468-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A solid-state reaction method was successfully employed to synthesize [(Zn_0.8Mg_0.2)_1-xNi_x]₂SiO₄ microwave dielectric ceramics by partially substituting [Zn_0.8Mg_0.2]²⁺ with Ni²⁺ ions. XRD analysis indicated that the proportion of the primary Zn₂SiO₄ phase decreases with increasing Ni²⁺ content, while the secondary MgNi(SiO₄) phase becomes predominant. This phase transition contributes to a reduction in dielectric loss. The sintering behavior, phase composition, microstructure, and microwave dielectric properties of the ceramics were systematically investigated. The incorporation of Ni²⁺ ions lowered the optimal sintering temperature from 1325 to 1400 °C. SEM analysis revealed that an optimal Ni²⁺ substitution level enhanced the grain density within the [(Zn_0.8Mg_0.2)_1-xNi_x]₂SiO₄ ceramic matrix. The relationship between Q × f and the average grain size as well as grain uniformity was analyzed. The trend of τ_f is primarily governed by the total V_izn-o and E_zn-o. Additionally, the relationship between lattice vibrations, Raman shifts, and dielectric properties was investigated using Raman spectroscopy. Certainly, the [(Zn_0.8Mg_0.2)_0.8Ni_0.2]₂SiO₄ ceramic, sintered at 1325 °C, exhibits an exemplary set of microwave dielectric properties: an εr value of 6.8, a Q × f value of 27,185 GHz, and a τ_f value of − 37 ppm/ °C.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

具有低相对介电系数和低介电损耗特性的[(Zn0.8Mg0.2)1-xNix]2SiO4 微波介电陶瓷的显微结构和拉曼光谱分析

采用固相反应方法，用Ni2+离子部分取代[Zn0.8Mg0.2]2+，成功合成了[(Zn0.8Mg0.2)1-xNix]2SiO4微波介质陶瓷。XRD分析表明，随着Ni2+含量的增加，初生Zn2SiO4相的比例降低，而次生MgNi（SiO4）相占主导地位。这种相变有助于降低介电损耗。系统地研究了陶瓷的烧结性能、相组成、显微结构和微波介电性能。Ni2+离子的掺入使最佳烧结温度从1325℃降低到1400℃。SEM分析表明，最佳Ni2+取代水平提高了[(Zn0.8Mg0.2)1-xNix]2SiO4陶瓷基体内部的晶粒密度。分析了Q × f与平均晶粒尺寸和晶粒均匀度的关系。τf的变化趋势主要受总Vizn-o和总Ezn-o的支配。此外，利用拉曼光谱研究了晶格振动、拉曼位移和介电性能之间的关系。当然，在1325°C烧结的[(Zn0.8Mg0.2)0.8Ni0.2]2SiO4陶瓷具有典型的微波介电性能：εr值为6.8，Q × f值为27185 GHz， τf值为−37 ppm/°C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

文献相关原料

公司名称

产品信息

阿拉丁

Silica

阿拉丁

Nickel oxide

阿拉丁

Magnesium oxide

阿拉丁

Zinc oxide

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.