Si/Graphene exotic type IMPATT (p+-n-n+-) Opto-sensor: First experimental observation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-07 DOI:10.1016/j.mssp.2024.109070

Sulagna Chatterjee , Madhumita Chakravarti , Moumita Mukherjee

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Abstract

On-chip DC characterization study has been performed on exotic-type Si/Graphene Avalanche Transit Time (ATT) device for ultra-fast optical-sensing. The performance of the newly proposed device has further been compared with conventional narrow and wide band gap semiconductor based p⁺-n-n⁺ devices. It has been observed that at X-band frequencies, the new class of device outperforms Si/SiC/GaN and their heterostructure counterparts, in terms of better RF power density (∼

1 W

and

8.1 W

), RF conversion efficiency (6 % and 18 %) and much better quantum efficiency (93 % and 91.5 %), respectively for device active-region-widths of 15 μm and 25 μm. Standard Chemical Vapor Deposition (CVD) route has been followed to fabricate the new class of device. Further, the authors have studied the applicability of the newly developed devices for optical-sensing. This comprehensive study reveals that the Device Under Test (DUT) exhibits photo responsivity at least 10 times better than its counter parts. Thus, the study will be useful for future applications in single-photon-detection for defence and civil sectors.

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硅/石墨烯奇异型 IMPATT（p+-n-n+-）光传感器：首次实验观测

我们对用于超快光传感的奇特型硅/石墨烯雪崩转换时间（ATT）器件进行了片上直流特性研究。新器件的性能还与传统的窄带隙和宽带隙半导体 p+-n-n+ 器件进行了比较。研究发现，在 X 波段频率下，新型器件的射频功率密度（1W 和 8.1W）、射频转换效率（6% 和 18%）以及量子效率（93% 和 91.5%）均优于 Si/SiC/GaN 及其异质结构器件，器件有源区宽度分别为 15 μm 和 25 μm。新型器件的制造采用了标准的化学气相沉积（CVD）工艺。此外，作者还研究了新开发器件在光学传感方面的适用性。这项综合研究表明，被测器件（DUT）的光响应性比同类器件至少高出 10 倍。因此，这项研究将有助于未来国防和民用领域的单光子探测应用。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.