Enhanced solid-state reaction synthesis of CdO, SnO, and CdO0·2/SnO0.2 hetero-junction electrode for high-performance energy storage

Waheed Ul Hassan , Ferhan Kaleem , Muhammad Rizwan Mahmood , Dilshaid Hussain , Imtiaz Ahmad , Nawal Alghamdi , Imosobomeh L. Ikhioya
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Abstract

This study unveils a superior method for energy storage synthesis, employing CdO, SnO, and CdO0·2/SnO0.2 hetero-junction electrodes through enhanced solid-state reaction. The CdO and SnO electrodes with a specific capacitance of 266.66, 191.66, 166.66 ​F/g and 138.88, 122.22, and 115.07 ​F/g. The CdO0·2/SnO0.2 hetero-junction nanoparticles with a specific capacitance of 370.37, 222.22, 158.73 ​F/g. The charge storage capacity of CdO0·2/SnO0.2 hetero-junction nanoparticle electrodes is outstanding, making them highly beneficial for energy storage and supercapacitor applications. The XRD patterns obtained from the synthesized CdO0·2/SnO0.2 hetero-junction nanoparticles exhibit distinct diffraction peaks, showing a cubic crystal structure. These diffraction peaks, at 2θ values of 27.111°, 34.189°, 38.682°, 52.635°, 55.793o, 62.779o, 66.676o, and 79.496° can be attributed to the (111), (200), (211), (212), (220), (300), (22), and (311) diffraction planes of CdO0·2/SnO0.2 hetero-junction nanoparticles. The observation of a grain-like shape in the CdO0·2/SnO0.2 hetero-junction nanoparticles structure is attributed to CdO, which serves as a confirmation of the formation of a hetero-junction. The energy bandgap of CdO, SnO, and CdO0·2/SnO0.2 hetero-junction nanoparticles material are 2.50, 3.50, and 3.35 ​eV respectively.

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用于高性能储能的 CdO、SnO 和 CdO0-2/SnO0.2 异质结电极的强化固态反应合成
本研究通过增强固态反应,采用氧化镉、氧化锡和 CdO0-2/SnO0.2 异质结电极,揭示了一种卓越的储能合成方法。CdO 和 SnO 电极的比电容分别为 266.66、191.66 和 166.66 F/g 以及 138.88、122.22 和 115.07 F/g。CdO0-2/SnO0.2 异质结纳米粒子的比电容分别为 370.37、222.22 和 158.73 F/g。CdO0-2/SnO0.2异质结纳米粒子电极的电荷存储容量非常突出,因此非常有利于能量存储和超级电容器的应用。从合成的 CdO0-2/SnO0.2 异质结纳米粒子获得的 XRD 图样显示出明显的衍射峰,呈现立方晶体结构。这些衍射峰的 2θ 值分别为 27.111°、34.189°、38.682°、52.635°、55.793o、62.779o、66.676o 和 79.496°,可归因于 CdO0-2/SnO0.2 异质结纳米粒子的 (111)、(200)、(211)、(212)、(220)、(300)、(22) 和 (311) 衍射平面。在 CdO0-2/SnO0.2 异质结纳米粒子结构中观察到的晶粒状形状归因于 CdO,这证实了异质结的形成。CdO、SnO 和 CdO0-2/SnO0.2 异质结纳米粒子材料的能带隙分别为 2.50、3.50 和 3.35 eV。
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