Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-19 DOI:10.1016/j.mssp.2024.109121

Haolan Qu , Wei Huang , Yu Zhang , Jin Sui , Ge Yang , Jiaxiang Chen , David Wei Zhang , Yuangang Wang , Yuanjie Lv , Zhihong Feng , Xinbo Zou

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Abstract

In this study, impact of 5 MeV proton irradiation with radiation fluence of 10¹³ cm⁻² on β-Ga₂O₃ power diode is investigated by a β-Ga₂O₃ Schottky barrier diode (SBD). Via temperature-dependent measurements, carrier removal rate R_C is determined to be 7.26 × 10² cm⁻¹ at 300 K. Meanwhile, the threshold voltage (V_on) and ideality factor (n) almost remain stable after proton irradiation. A close-to-unity n was observed for a wide temperature range indicating near-ideal Schottky characteristics. Dynamic degradation was observed at 300K, but was greatly suppressed at a low temperature of 100K. Meanwhile, two more bulk traps are discovered in proton irradiated β-Ga₂O₃ SBD by deep-level transient spectroscopy (DLTS). The larger corrected trap concentration (N_Ta) in proton irradiated β-Ga₂O₃ SBD was regarded as the reason behind slightly worsened dynamic on-resistance instability at 300 K. Furthermore, lower low frequency noise is revealed for proton irradiated device at room temperature and cryogenic temperature. The study demonstrates the competitive irradiation hardness of β-Ga₂O₃ power diodes and paves a solid path for the deployment of β-Ga₂O₃ in space.

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5 MeV 质子辐照对 β-Ga2O3 功率二极管电气和陷阱特性的影响

本研究通过一个 β-Ga2O3 肖特基势垒二极管 (SBD)，研究了 1013 cm-2 辐射通量的 5 MeV 质子辐照对 β-Ga2O3 功率二极管的影响。同时，质子辐照后，阈值电压（Von）和理想因子（n）几乎保持稳定。在很宽的温度范围内都能观察到接近统一的 n，这表明肖特基特性接近理想。在 300K 温度下观察到了动态退化，但在 100K 的低温下被大大抑制。同时，通过深层瞬态光谱（DLTS），在质子辐照过的β-Ga2O3 SBD 中又发现了两个体阱。质子辐照的 β-Ga2O3 SBD 中校正陷阱浓度（NTa）较大，这被认为是 300 K 时动态导通电阻不稳定性略微恶化的原因。这项研究证明了β-Ga2O3功率二极管具有竞争性的辐照硬度，并为将β-Ga2O3应用于太空铺平了道路。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.