High κ and large positive τf in the low temperature sintering BaNb2V2O11 ceramics

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-25 DOI:10.1007/s10854-024-13902-9

Chia-Chien Wu, Cheng-Liang Huang

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Abstract

The BaNb₂V₂O₁₁ microwave dielectric material, synthesized using a solid-state process, was proposed for utilization as a temperature compensator in LTCC applications. XRD analysis indicated that all samples revealed a trigonal structure of the BaNb₂V₂O₁₁ phase with the R3̅m (166) space group. Influence of lattice energy and bond energy on the dielectric characteristics were investigated. Correlation between the Full Width at Half Maximum (FWHM) of the primary Raman peak at 917 cm⁻¹ and the Q × f value was also analyzed. The sample sintered at 860 °C exhibited remarkable microwave dielectric properties, including a high relative permittivity (ε_r) of 88.7, a high Q × f value of 2100 GHz, and a significantly positive temperature coefficient of resonant frequency (τ_f) of + 602.4 ppm/°C. This notably large positive τ_f value makes it an effective τ_f compensator. Furthermore, the high ε_r value indicates its suitability for use in decoupling devices or as dielectric resonators in 5G base stations.

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低温烧结 BaNb2V2O11 陶瓷中的高κ和大正τf

利用固态工艺合成的 BaNb2V2O11 微波介电材料被建议用作 LTCC 应用中的温度补偿器。XRD 分析表明，所有样品都显示出 BaNb2V2O11 相的三方结构，空间群为 R3̅m（166）。研究了晶格能和键能对介电特性的影响。还分析了 917 cm-1 处主拉曼峰的半最大全宽（FWHM）与 Q × f 值之间的相关性。在 860 °C 下烧结的样品具有显著的微波介电性能，包括 88.7 的高相对介电常数 (εr)、2100 GHz 的高 Q × f 值以及 + 602.4 ppm/°C 的谐振频率温度系数 (τf)。这一显著的正 τf 值使其成为一个有效的 τf 补偿器。此外，高εr 值还表明它适合用于去耦器件或 5G 基站中的介质谐振器。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.