Rapid conduction of NiO-based ceramic resistors: the competitive relationship between electron–hole exchange and screening effect

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-30 DOI:10.1007/s10854-024-13959-6
Juan Zeng, Mengshi Zeng, Huachang Wang, Yuanyu Wang, Bing Li, Xu Huang, Jingsong Liu
{"title":"Rapid conduction of NiO-based ceramic resistors: the competitive relationship between electron–hole exchange and screening effect","authors":"Juan Zeng,&nbsp;Mengshi Zeng,&nbsp;Huachang Wang,&nbsp;Yuanyu Wang,&nbsp;Bing Li,&nbsp;Xu Huang,&nbsp;Jingsong Liu","doi":"10.1007/s10854-024-13959-6","DOIUrl":null,"url":null,"abstract":"<div><p>NiO-based ceramic resistors doped with Li<sup>+</sup>, Na<sup>+</sup>, and K<sup>+</sup> were prepared using the traditional solid-state method. The effects of microstructure and electrical properties of NiO-based ceramic resistors doped with alkali metal ions of varying ionic radii were investigated. XPS and Raman spectra indicate that doping with alkali metal ions promotes the valence state change of nickel ions from Ni<sup>2+</sup> to Ni<sup>3+</sup>, facilitating charge transfer. The acceleration of charge transfer is beneficial for decreasing resistivity, improving single-pulse discharge rate, and optimizing <i>I</i>–<i>V</i> characteristics. Additionally, the increasing difference in radius between the dopant ions and Ni<sup>2+</sup> ions enhances the screening effect, which increasingly hinders the charge transfer process. The NiO-based ceramic resistor doped with Li<sup>+</sup> ions exhibited the best comprehensive electrochemical performance with a nonlinear coefficient <i>α</i> of 1.04, a resistivity <i>ρ</i> value of 4.83 Ω·cm, a shortest single-pulse discharge time <i>t</i><sub>0.9</sub> of 94 ns, and a resistance temperature coefficient <i>α</i><sub>T</sub> value of − 1.25 × 10<sup>–2</sup> °C<sup>−1</sup>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13959-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

NiO-based ceramic resistors doped with Li+, Na+, and K+ were prepared using the traditional solid-state method. The effects of microstructure and electrical properties of NiO-based ceramic resistors doped with alkali metal ions of varying ionic radii were investigated. XPS and Raman spectra indicate that doping with alkali metal ions promotes the valence state change of nickel ions from Ni2+ to Ni3+, facilitating charge transfer. The acceleration of charge transfer is beneficial for decreasing resistivity, improving single-pulse discharge rate, and optimizing IV characteristics. Additionally, the increasing difference in radius between the dopant ions and Ni2+ ions enhances the screening effect, which increasingly hinders the charge transfer process. The NiO-based ceramic resistor doped with Li+ ions exhibited the best comprehensive electrochemical performance with a nonlinear coefficient α of 1.04, a resistivity ρ value of 4.83 Ω·cm, a shortest single-pulse discharge time t0.9 of 94 ns, and a resistance temperature coefficient αT value of − 1.25 × 10–2 °C−1.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
镍基陶瓷电阻器的快速传导:电子空穴交换与屏蔽效应的竞争关系
采用传统的固态方法制备了掺杂Li+、Na+和K+的nio基陶瓷电阻器。研究了不同离子半径碱金属离子掺杂对镍基陶瓷电阻器微结构和电性能的影响。XPS和拉曼光谱表明,碱金属离子的掺杂促进了镍离子的价态从Ni2+转变为Ni3+,有利于电荷转移。加速电荷转移有利于降低电阻率,提高单脉冲放电速率,优化I-V特性。此外,掺杂离子与Ni2+离子之间的半径差越来越大,增强了筛选作用,从而越来越阻碍电荷转移过程。掺杂Li+离子的镍基陶瓷电阻器综合电化学性能最佳,非线性系数α为1.04,电阻率ρ值为4.83 Ω·cm,最短单脉冲放电时间t0.9为94 ns,电阻温度系数α t值为- 1.25 × 10-2°C - 1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
Non-newtonian PEO–TiO2 nanocomposite gel polymer electrolytes for DSSCs: rheology guided crystallinity, ionic transport, and long-term device performance CMTS: An inorganic hole-transport material for efficient and stable perovskite solar cells through surface defect passivation Transparent single-material organic solar cells (SMOSCs) on flexible PET support: structure–property correlations in homojunction and heterojunction devices Microwave-aided cobalt oxide modified bismuth tin oxide (BiSnO) microrods as a novel electrode material for supercapacitor applications Structural evolution and optoelectronic enhancement of Cd1-xPbxS thin films for self-powered PEC photodetectors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1