{"title":"Incommensurate modulated structure and energy storage properties of Pb1−1.5xLax(Zr0.5Sn0.4Ti0.1)O3 antiferroelectric ceramics","authors":"Zhiyong Wang, Chang Liu, Tianyang Zheng, Yunfei Liu, Yinong Lyu","doi":"10.1007/s10854-024-13918-1","DOIUrl":null,"url":null,"abstract":"<div><p>The (Pb, La)(Zr, Sn, Ti)O<sub>3</sub> (PLZST) ceramic with unique antiferroelectric (AFE) properties stands as a highly promising material for diverse functional applications, especially in energy storage and conversion. In this study, Pb<sub>1–1.5<i>x</i></sub>La<sub><i>x</i></sub>(Zr<sub>0.5</sub>Sn<sub>0.4</sub>Ti<sub>0.1</sub>)O<sub>3</sub> (<i>x</i> = 0, 0.005, 0.01, 0.015, 0.02, and 0.025) AFE ceramics have been prepared by the conventional solid-state reaction method. The phase structure of the ceramic changed from tetragonal phase at <i>x</i> = 0 to pseudo-cubic phase at <i>x</i> = 0.02 with increasing La doping. Notably, the PLZST-2 ceramics exhibited an enhanced energy storage density of 1.63 J/cm<sup>3</sup> and an energy storage efficiency of 82.23%, respectively. The transmission electron microscopy (TEM) analyses revealed the presence of an incommensurate modulated structure in the Pb<sub>1–1.5<i>x</i></sub>La<sub><i>x</i></sub>(Zr<sub>0.5</sub>Sn<sub>0.4</sub>Ti<sub>0.1</sub>)O<sub>3</sub>, and all the reflections can be expressed as <i>H</i> = <i>ha</i>* + <i>kb</i>* + <i>lc</i>* ± 1/8.5(<i>a</i>* + <i>b</i>*), where <i>h, k,</i> and<i> l</i> are integers. Furthermore, aberration-corrected scanning transmission electron microscopy (AC-STEM) was performed to analyze the atomic-scale structure of the PLZST-2 sample. The annular dark field (ADF) STEM results show the antiparallel arrangement of ion displacement on the atomic scale. The findings of this study enhance our comprehension of the exceptional properties from a structural perspective and hold the potential to facilitate the ongoing advancement of high-performance materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-024-13918-1.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13918-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The (Pb, La)(Zr, Sn, Ti)O3 (PLZST) ceramic with unique antiferroelectric (AFE) properties stands as a highly promising material for diverse functional applications, especially in energy storage and conversion. In this study, Pb1–1.5xLax(Zr0.5Sn0.4Ti0.1)O3 (x = 0, 0.005, 0.01, 0.015, 0.02, and 0.025) AFE ceramics have been prepared by the conventional solid-state reaction method. The phase structure of the ceramic changed from tetragonal phase at x = 0 to pseudo-cubic phase at x = 0.02 with increasing La doping. Notably, the PLZST-2 ceramics exhibited an enhanced energy storage density of 1.63 J/cm3 and an energy storage efficiency of 82.23%, respectively. The transmission electron microscopy (TEM) analyses revealed the presence of an incommensurate modulated structure in the Pb1–1.5xLax(Zr0.5Sn0.4Ti0.1)O3, and all the reflections can be expressed as H = ha* + kb* + lc* ± 1/8.5(a* + b*), where h, k, and l are integers. Furthermore, aberration-corrected scanning transmission electron microscopy (AC-STEM) was performed to analyze the atomic-scale structure of the PLZST-2 sample. The annular dark field (ADF) STEM results show the antiparallel arrangement of ion displacement on the atomic scale. The findings of this study enhance our comprehension of the exceptional properties from a structural perspective and hold the potential to facilitate the ongoing advancement of high-performance materials.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.