Investigation of the electrical performance and carrier transport mechanism for heterostructured bilayer In2O3/InGaSnO thin-film transistors

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2024-12-03 DOI:10.1063/5.0231796

Zhenyu Han, Ablat Abliz

{"title":"Investigation of the electrical performance and carrier transport mechanism for heterostructured bilayer In2O3/InGaSnO thin-film transistors","authors":"Zhenyu Han, Ablat Abliz","doi":"10.1063/5.0231796","DOIUrl":null,"url":null,"abstract":"In this study, InGaSnO (IGTO)-based bilayer In2O3/IGTO and IGTO/In2O3 thin-film transistors (TFTs) were designed, and their carrier transport mechanisms and electrical performances were investigated. Herein, the ultrathin In2O3 layer provided a higher carrier concentration (Ne), thus accumulating free carriers and enhancing the carrier mobility. The thick amorphous IGTO layer controlled the device and carrier conductance, yielding a reasonable threshold voltage (Vth). Consequently, the optimized bilayer In2O3/IGTO TFTs exhibited high field-effect mobility (μFE) of 43.6 cm2 V−1s−1 and good control with Vth of 1.2 V compared to the single layer In2O3 and IGTO TFTs. Experimental analysis indicated a decrease in the oxygen vacancy (VO) formation energy owing to the interaction between interstitial Ini and Sn. Consequently, numerous unpaired electrons were generated from VO at the hetero-interfaces. In addition, an analysis of the energy band shift indicated that the heterojunction generated parasitic channels to control the Ne, and the In2O3/IGTO TFT exhibited a smaller Rc (0.34 KΩ μm), which enhanced the μFE of TFTs. Overall, the high-performance bilayer In2O3/IGTO TFTs fabricated herein have significant potential for applications in thin-film electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"53 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0231796","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

In this study, InGaSnO (IGTO)-based bilayer In2O3/IGTO and IGTO/In2O3 thin-film transistors (TFTs) were designed, and their carrier transport mechanisms and electrical performances were investigated. Herein, the ultrathin In2O3 layer provided a higher carrier concentration (Ne), thus accumulating free carriers and enhancing the carrier mobility. The thick amorphous IGTO layer controlled the device and carrier conductance, yielding a reasonable threshold voltage (Vth). Consequently, the optimized bilayer In2O3/IGTO TFTs exhibited high field-effect mobility (μFE) of 43.6 cm2 V−1s−1 and good control with Vth of 1.2 V compared to the single layer In2O3 and IGTO TFTs. Experimental analysis indicated a decrease in the oxygen vacancy (VO) formation energy owing to the interaction between interstitial Ini and Sn. Consequently, numerous unpaired electrons were generated from VO at the hetero-interfaces. In addition, an analysis of the energy band shift indicated that the heterojunction generated parasitic channels to control the Ne, and the In2O3/IGTO TFT exhibited a smaller Rc (0.34 KΩ μm), which enhanced the μFE of TFTs. Overall, the high-performance bilayer In2O3/IGTO TFTs fabricated herein have significant potential for applications in thin-film electronics.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

求助全文

约1分钟内获得全文去求助

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.