{"title":"Theoretical Investigation of Thermoelectric Properties of Semiconducting Janus \\(\\hbox {M}_{2}\\)COS (M = Zr, Hf) MXenes","authors":"Gourav Rana, Chandan Bera","doi":"10.1007/s11664-024-11560-5","DOIUrl":null,"url":null,"abstract":"<div><p>A theoretical investigation is conducted on semiconducting MXenes <span>\\(\\hbox {M}_{2}\\)</span>COS (M = Zr, Hf) using both density functional theory and the Boltzmann transport equation. The findings suggest that optimization of thermoelectric properties is more effective through <i>n</i>-type doping than <i>p</i>-type doping. At 300 K, <i>n</i>-type doping yields a power factor of 4.3<span>\\(\\times \\)</span> 10<span>\\(^{3}\\)</span> <span>\\(\\mu \\)</span>W/<span>\\(\\hbox {mK}^{2}\\)</span> for Zr<span>\\({_2}\\)</span>COS and 4.5<span>\\(\\times \\)</span> 10<span>\\(^{3}\\)</span> <span>\\(\\mu \\)</span>W/<span>\\(\\hbox {mK}^{2}\\)</span> for Hf<span>\\({_2}\\)</span>COS. Furthermore, lattice thermal conductivity (<span>\\(\\kappa _{l}\\)</span>) values of 21.8 W/m K and 27 W/m K are obtained for Zr<span>\\({_2}\\)</span>COS and Hf<span>\\({_2}\\)</span>COS, respectively, at 300 K. These values are lower than the lattice thermal conductivity of oxygen-functionalized MXenes <span>\\(\\hbox {Zr}_2\\hbox {CO}_2\\)</span> (61.9 W/m K) and <span>\\(\\hbox {Hf}_2\\hbox {CO}_2\\)</span> (86.3 W/m K). The projected thermoelectric figure of merit value can potentially reach 0.27 and 0.23 at 700 K for <i>n</i>-type Zr<span>\\({_2}\\)</span>COS and Hf<span>\\({_2}\\)</span>COS, respectively. These findings reveal the promising application prospects for <i>n</i>-type Zr<span>\\({_2}\\)</span>COS and Hf<span>\\({_2}\\)</span>COS in the field of thermoelectric materials.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"432 - 439"},"PeriodicalIF":2.2000,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-024-11560-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A theoretical investigation is conducted on semiconducting MXenes \(\hbox {M}_{2}\)COS (M = Zr, Hf) using both density functional theory and the Boltzmann transport equation. The findings suggest that optimization of thermoelectric properties is more effective through n-type doping than p-type doping. At 300 K, n-type doping yields a power factor of 4.3\(\times \) 10\(^{3}\)\(\mu \)W/\(\hbox {mK}^{2}\) for Zr\({_2}\)COS and 4.5\(\times \) 10\(^{3}\)\(\mu \)W/\(\hbox {mK}^{2}\) for Hf\({_2}\)COS. Furthermore, lattice thermal conductivity (\(\kappa _{l}\)) values of 21.8 W/m K and 27 W/m K are obtained for Zr\({_2}\)COS and Hf\({_2}\)COS, respectively, at 300 K. These values are lower than the lattice thermal conductivity of oxygen-functionalized MXenes \(\hbox {Zr}_2\hbox {CO}_2\) (61.9 W/m K) and \(\hbox {Hf}_2\hbox {CO}_2\) (86.3 W/m K). The projected thermoelectric figure of merit value can potentially reach 0.27 and 0.23 at 700 K for n-type Zr\({_2}\)COS and Hf\({_2}\)COS, respectively. These findings reveal the promising application prospects for n-type Zr\({_2}\)COS and Hf\({_2}\)COS in the field of thermoelectric materials.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.