On-Current Improvement in Bulk-Accumulated Double-Gate ZnO TFT

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-11-07 DOI:10.1007/s11664-024-11569-w

Saurabh Jaiswal, Divya Dubey, Shilpi Singh, Rupam Goswami, Manish Goswami, Kavindra Kandpal

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Abstract

Channel thickness is a key parameter in determining the electrical characteristics of double-gate ZnO thin film transistors (DGTFTs). In thicker channels, the accumulation region is confined to the ZnO/SiO₂ (semiconductor/gate dielectric) interface. However, in such devices with ultrathin channels, the accumulation region extends the entire depth of the channel. This work investigates the impact of channel thickness on the electrical characteristics of a double-gate ZnO TFT in the grounded top gate (GTG) and common mode gate (CMG) biasing modes. Gaussian distributed traps are assumed to be present at the ZnO/SiO₂ interface with a peak concentration of 10¹² cm⁻² eV⁻¹ to accurately represent the interface. From technology computer-aided design simulations, it is concluded that in CMG mode, a bulk-accumulated 5-nm-thick DGTFT shows a 15- fold improvement in ON current as compared to its GTG counterpart. However, a 500-nm-thick DGTFT CMG mode shows merely twofold improvement in ON current compared to GTG mode.

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提高块状累积双栅氧化锌 TFT 的导通电流

沟道厚度是决定双栅氧化锌薄膜晶体管（DGTFT）电气特性的关键参数。在较厚的沟道中，积聚区仅限于 ZnO/SiO2（半导体/栅极电介质）界面。然而，在这种具有超薄沟道的器件中，累积区延伸至整个沟道深度。这项研究探讨了在接地顶栅（GTG）和共模栅（CMG）偏压模式下，沟道厚度对双栅氧化锌 TFT 电特性的影响。假定 ZnO/SiO2 界面存在高斯分布陷阱，峰值浓度为 1012 cm-2 eV-1，以准确表示该界面。通过技术计算机辅助设计模拟得出的结论是，在 CMG 模式下，5 纳米厚的批量累积 DGTFT 的导通电流比 GTG 对应器件提高了 15 倍。然而，与 GTG 模式相比，500 纳米厚的 DGTFT CMG 模式的导通电流仅提高了 2 倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.