Study of Dielectric Properties of Binary Mixtures of n-Octanol and N,N-Dimethylformamide in Lower Microwave Radiation

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-10-07 DOI:10.1007/s11664-024-11505-y

N. A. Chaudhary, S. P. Patel, C. R. Vaja, N. K. Acharya, V. A. Rana, A. N. Prajapati

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Abstract

The complex permittivity spectra of binary mixtures (0.0 → 1.0) of n-octanol and N,N-dimethylformamide (DMF) were obtained in the lower microwave radiation region using a vector network analyzer (VNA) at 293.15 K The complex permittivity spectra of n-octanol with DMF and binary mixtures were fitted in a dielectric relaxation model (Havriliak–Negami) to obtain the static dielectric constant (ε₀) and relaxation time (τ). Complex nonlinear least-squares (CNLS) fitting was used to fit the complex dielectric spectra. The nonlinear variation in ε₀ and τ against DMF concentration in binary mixtures of n-octanol + DMF indicated hetero-molecular interaction between participating molecular species. The variation in the dielectric constant and dielectric loss against concentration is discussed in light of their dependence on frequency. The microwave radiation heating parameters including power reflected (p_r), power transmitted (p_t), and penetration depth (d_p) were investigated at general purpose and commercial microwave radiation of 2.45 GHz, respectively.

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正辛醇和N，N-二甲基甲酰胺二元混合物在低微波辐射下的介电性能研究

利用矢量网络分析仪（VNA）在293.15 K下获得了正辛醇与N，N-二甲基甲酰胺（DMF）二元混合物（0.0→1.0）的复介电常数谱。将正辛醇与DMF及二元混合物的复介电常数谱拟合到介电弛豫模型（Havriliak-Negami）中，得到了其静态介电常数（ε0）和弛豫时间（τ）。采用复非线性最小二乘（CNLS）拟合方法拟合复介质谱。在正辛醇+ DMF二元混合物中，ε0和τ随DMF浓度的非线性变化表明参与分子种之间存在异分子相互作用。从介电常数和介电损耗与频率的关系出发，讨论了介电常数和介电损耗随浓度的变化。研究了微波辐射加热参数，包括反射功率（pr）、透射功率（pt）和穿透深度（dp），分别在普通微波和2.45 GHz商用微波辐射下进行。图形抽象

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.