{"title":"Structural, optical, and dielectric properties of Sol–gel derived Ca0.6Sr0.4La4Ti5O17 layered perovskite","authors":"Raz Muhammad, Izaz Khan, Carlos R. Rambo","doi":"10.1007/s10854-024-14082-2","DOIUrl":null,"url":null,"abstract":"<div><p>A<sub><i>n</i></sub>B<sub><i>n</i></sub>O<sub>3<i>n</i>+2</sub> is a type of oxygen-excess layered perovskites that has attracted significant attention from researchers in the field of electroceramics. In this study, the structural, optical, and dielectric properties of sol–gel derived Ca<sub>0.6</sub>Sr<sub>0.4</sub>La<sub>4</sub>Ti<sub>5</sub>O<sub>17</sub> layered perovskite were investigated. X-ray diffraction (XRD) analysis confirmed the formation of a single-phase monoclinic structure with space group <i>P</i>121/<i>c</i>1 (no. 14). Earlier, it was reported to crystallize into the orthorhombic structure with space group <i>Pmnn</i>. Therefore, Rietveld analysis was conducted to confirm the crystal structure with lattice parameters <i>a</i> = 7.7904 Å, <i>b</i> = 5.5185 Å, <i>c</i> = 31.4869 Å, β = 96.99° and cell volume of 1343.61 Å<sup>3</sup>, followed by Raman spectroscopy which also confirmed the monoclinic structure. Scanning electron microscopy micrographs of the sample revealed elongated rod-like grains with 0.6 mm in length and 0.2 mm in width. Diffused reflectance spectroscopy (DRS) showed a direct bandgap of 5.31 eV and an indirect bandgap of 3.76 eV. Room temperature dielectric response <i>versus</i> frequency has been studied, which shows an almost constant relative permittivity (i.e., from 43 to 42) and a decreasing dielectric loss (from 0.12 to 0.0006) with an increase in frequency.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14082-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
AnBnO3n+2 is a type of oxygen-excess layered perovskites that has attracted significant attention from researchers in the field of electroceramics. In this study, the structural, optical, and dielectric properties of sol–gel derived Ca0.6Sr0.4La4Ti5O17 layered perovskite were investigated. X-ray diffraction (XRD) analysis confirmed the formation of a single-phase monoclinic structure with space group P121/c1 (no. 14). Earlier, it was reported to crystallize into the orthorhombic structure with space group Pmnn. Therefore, Rietveld analysis was conducted to confirm the crystal structure with lattice parameters a = 7.7904 Å, b = 5.5185 Å, c = 31.4869 Å, β = 96.99° and cell volume of 1343.61 Å3, followed by Raman spectroscopy which also confirmed the monoclinic structure. Scanning electron microscopy micrographs of the sample revealed elongated rod-like grains with 0.6 mm in length and 0.2 mm in width. Diffused reflectance spectroscopy (DRS) showed a direct bandgap of 5.31 eV and an indirect bandgap of 3.76 eV. Room temperature dielectric response versus frequency has been studied, which shows an almost constant relative permittivity (i.e., from 43 to 42) and a decreasing dielectric loss (from 0.12 to 0.0006) with an increase in frequency.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.