Structural, optical, and dielectric properties of Sol–gel derived Ca0.6Sr0.4La4Ti5O17 layered perovskite

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-23 DOI:10.1007/s10854-024-14082-2
Raz Muhammad, Izaz Khan, Carlos R. Rambo
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Abstract

AnBnO3n+2 is a type of oxygen-excess layered perovskites that has attracted significant attention from researchers in the field of electroceramics. In this study, the structural, optical, and dielectric properties of sol–gel derived Ca0.6Sr0.4La4Ti5O17 layered perovskite were investigated. X-ray diffraction (XRD) analysis confirmed the formation of a single-phase monoclinic structure with space group P121/c1 (no. 14). Earlier, it was reported to crystallize into the orthorhombic structure with space group Pmnn. Therefore, Rietveld analysis was conducted to confirm the crystal structure with lattice parameters a = 7.7904 Å, b = 5.5185 Å, c = 31.4869 Å, β = 96.99° and cell volume of 1343.61 Å3, followed by Raman spectroscopy which also confirmed the monoclinic structure. Scanning electron microscopy micrographs of the sample revealed elongated rod-like grains with 0.6 mm in length and 0.2 mm in width. Diffused reflectance spectroscopy (DRS) showed a direct bandgap of 5.31 eV and an indirect bandgap of 3.76 eV. Room temperature dielectric response versus frequency has been studied, which shows an almost constant relative permittivity (i.e., from 43 to 42) and a decreasing dielectric loss (from 0.12 to 0.0006) with an increase in frequency.

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溶胶-凝胶衍生Ca0.6Sr0.4La4Ti5O17层状钙钛矿的结构、光学和介电性质
AnBnO3n+2是一种氧过剩的层状钙钛矿,在电陶瓷领域引起了研究人员的极大关注。本文研究了溶胶-凝胶法制备的Ca0.6Sr0.4La4Ti5O17层状钙钛矿的结构、光学和介电性能。x射线衍射(XRD)分析证实形成了具有空间群P121/c1 (no. 1)的单相单斜结构。14)。早先有报道称其结晶成具有空间群Pmnn的正交结构。因此,通过Rietveld分析确定了晶体结构,晶格参数为a = 7.7904 Å, b = 5.5185 Å, c = 31.4869 Å, β = 96.99°,胞体体积为1343.61 Å3,拉曼光谱也证实了单斜晶型结构。样品的扫描电镜显微照片显示长0.6 mm,宽0.2 mm的细长棒状颗粒。漫反射光谱(DRS)显示直接带隙为5.31 eV,间接带隙为3.76 eV。室温下的介电响应随频率变化的研究表明,相对介电常数几乎恒定(即从43到42),而介电损耗随着频率的增加而降低(从0.12到0.0006)。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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