Stability and Mobility of Disconnections in Solute Atmospheres: Insights from Interfacial Defect Diagrams

IF 8.1 1区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY Physical review letters Pub Date : 2025-01-03 DOI:10.1103/physrevlett.134.016202
Chongze Hu, Douglas L. Medlin, Rémi Dingreville
{"title":"Stability and Mobility of Disconnections in Solute Atmospheres: Insights from Interfacial Defect Diagrams","authors":"Chongze Hu, Douglas L. Medlin, Rémi Dingreville","doi":"10.1103/physrevlett.134.016202","DOIUrl":null,"url":null,"abstract":"This Letter explores the stability of disconnections (step-dislocation defects) at grain boundaries in binary alloys. We introduce interfacial defect diagrams, derived from atomistic simulations and segregation theory, to predict the stability of disconnections in the temperature-solute concentration phase space and relate it to governing segregation mechanisms. These diagrams reveal multiple stability regimes influenced by solute-induced clustering and pinning effects impacting the thermal migration of disconnections and offering insights into their thermodynamics and kinetic properties. <jats:supplementary-material> <jats:copyright-statement>Published by the American Physical Society</jats:copyright-statement> <jats:copyright-year>2025</jats:copyright-year> </jats:permissions> </jats:supplementary-material>","PeriodicalId":20069,"journal":{"name":"Physical review letters","volume":"27 1","pages":""},"PeriodicalIF":8.1000,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical review letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1103/physrevlett.134.016202","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

This Letter explores the stability of disconnections (step-dislocation defects) at grain boundaries in binary alloys. We introduce interfacial defect diagrams, derived from atomistic simulations and segregation theory, to predict the stability of disconnections in the temperature-solute concentration phase space and relate it to governing segregation mechanisms. These diagrams reveal multiple stability regimes influenced by solute-induced clustering and pinning effects impacting the thermal migration of disconnections and offering insights into their thermodynamics and kinetic properties. Published by the American Physical Society 2025
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来源期刊
Physical review letters
Physical review letters 物理-物理:综合
CiteScore
16.50
自引率
7.00%
发文量
2673
审稿时长
2.2 months
期刊介绍: Physical review letters(PRL)covers the full range of applied, fundamental, and interdisciplinary physics research topics: General physics, including statistical and quantum mechanics and quantum information Gravitation, astrophysics, and cosmology Elementary particles and fields Nuclear physics Atomic, molecular, and optical physics Nonlinear dynamics, fluid dynamics, and classical optics Plasma and beam physics Condensed matter and materials physics Polymers, soft matter, biological, climate and interdisciplinary physics, including networks
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