Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA

Abstract

This article presents a comprehensive study of single-event effects (SEEs) in a three-stage Silicon Germanium heterojunction bipolar transistors (SiGe HBTs)-based ultrawideband low-noise amplifier (UWB LNA) under heavy ion and pulsed laser irradiation. The study aims to evaluate the circuit’s susceptibility to radiation-induced transients and compare the characteristics of single-event transients (SETs) induced by different irradiation methods. Utilizing single-photon absorption (SPA) laser microbeam testing, SET waveforms were captured at various amplifier stages, revealing stage-specific, frequency-dependent responses. This approach provided a novel method for localizing SET generation, which was validated by subsequent heavy-ion broad beam experiments. Joint device- and circuit-level simulations were performed to investigate the underlying mechanisms, offering insights into the impact of interstage compensation on performance degradation and uncovering SET propagation dynamics within the three-stage UWB LNA. The results show that combining heavy ion and pulsed laser irradiation enables a more comprehensive understanding of SEE behavior in UWB LNAs, offering valuable implications for the design of radiation-hardened circuits in space applications. The experimental and simulation methods outlined in this article can be extended to SET studies in other RF integrated circuits (RF ICs).